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Field-effect transistor
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211	Figure 4: Typical Waveforms for VIN = 48 V to 5 V/7 A (1000kHz) Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage NOTE. The EPC9010 development board does not Add to Reading List Source URL: epc-co.com Language: English - Date: 2014-03-15 22:51:38 Integrated circuits IC power supply pin Pulse-width modulation Field-effect transistor Depletion and enhancement modes Buck converter Oscilloscope Transistor Electronics Technology Electromagnetism
212	Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Add to Reading List Source URL: www.cree.com Language: English - Date: 2014-05-08 10:47:36 Transconductance Field-effect transistor High electron mobility transistor Current source Ohm Electromagnetism Electricity Electronics
213	Two graphene layers may be better than one Add to Reading List Source URL: phys.org Language: English - Date: 2015-02-26 09:26:34 Materials science Physics Superhard materials Graphene Bilayer graphene Field-effect transistor Transistor Silicon carbide Graphite oxide Chemistry Nanomaterials Emerging technologies
214	646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:15 High electron mobility transistor Field-effect transistor MODFET Double heterostructure Transistor Threshold voltage MESFET Transconductance Semiconductor Electronics Technology Electromagnetism
215	Hindawi Publishing Corporation International Journal of Polymer Science Volume 2012, Article ID[removed], 10 pages doi:[removed][removed]Review Article Add to Reading List Source URL: downloads.hindawi.com Language: English - Date: 2014-08-28 18:24:31 Semiconductor devices Organic field-effect transistor Thin-film transistor Threshold voltage Printed electronics Transistor R-value Siloxane Gallium nitride Electronics Chemistry Electromagnetism
216	IR25750LPBF HVICTM SOT-23 Current Sensing IC Add to Reading List Source URL: www.irf.com Language: English - Date: 2015-01-28 19:43:47 Power electronics MOSFET Insulated gate bipolar transistor Field-effect transistor Comparator Transistor Reading Open collector Bootstrapping Electronics Electronic engineering Electromagnetism
217	NEWS & VIEWS Graphene Nanoelectronics goes flat out The unique electronic band structure of graphene has led to a number of exotic effects that have fascinated fundamental researchers and may also lead to improvements in Add to Reading List Source URL: www.physics.rutgers.edu Language: English - Date: 2008-09-05 10:27:56 Nanomaterials Emerging technologies Superhard materials Graphene Carbon nanotube Philip Kim Bilayer graphene Electron mobility Field-effect transistor Chemistry Physics Materials science
218	DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 Add to Reading List Source URL: www.nxp.com Language: English - Date: 2011-07-04 05:04:18 Technology Transistor Field-effect transistor Investment Private equity Philips NXP Semiconductors
219	Si1450DH - Datasheet. www.s-manuals.com. Add to Reading List Source URL: www.s-manuals.com Language: English - Date: 2012-12-28 19:13:03 Power MOSFET Diode Field-effect transistor MOSFET Threshold voltage Transconductance Electrical engineering Electromagnetism Electronics
220	NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Add to Reading List Source URL: www.onsemi.com Language: English - Date: 2011-11-15 11:11:49 Power MOSFET MOSFET Threshold voltage Field-effect transistor Diode Electronic design Electrical engineering Electronic engineering Electromagnetism

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